This study proposes a delta-doped InGaP/InGaAs/GaAs high-electron mobility transistor (HEMT) grown by a metallorganic chemical vapor deposition system. The wide-range temperature-dependent breakdown characteristics of the delta-doped InGaP/InGaAs HEMT are studied. The two-terminal gate-source breakdown voltage of the proposed HEMT is as high as 70 V at 300 K. The drain current of the delta-doped InGaP/InGaAs HEMT has low sensitivity to the measured temperature between 77 and 470 K. Furthermore, the proposed device sustains high voltages over 30 V within the temperature range 77-470 K. (c) 2005 The Electrochemical Society.