Thin Solid Films, Vol.483, No.1-2, 301-305, 2005
Infinite-layer (Ca1-xSrxCuO2) film growth by molecular beam epitaxy and effect of hole doping
We have grown infinite-layer (Ca1-xSrxCuO2) epitaxial films using ozone assisted molecular beam epitaxy. In situ reflective high energy electron diffraction analysis shows that two-dimensional defect-free films can be obtained for limited composition (0.15 < x < 0.8) with low temperature seed layer growth scheme. We have also studied various hole doping (oxygenation, vacancy, and Na substitution for Ca) effects on the resistivity of the films. Although we have observed substantial drops in the film resistivity for all three doping schemes, superconductivity is not observed for any of them. (c) 2005 Elsevier B.V. All rights reserved.