The chemical composition of the Cu(In,Ga)Se-2/CdS interface is studied using photoelectron spectroscopy, with monochromatized Al K alpha and synchrotron radiation as excitation source. The samples were prepared by the decapping of Se layers, yielding a Cu-poor surface composition. CdS deposition and photoemission were performed in the same vacuum system. An excess of sulfur is detected at very low US thickness. However, reference experiments suggest that the interface is atomically abrupt. In contrast to the interface of US with a stoichiometric CuInSe2 single-crystal surface, the formation of Cu,S at elevated temperatures is suppressed by the Cu-poor surface phase. (c) 2004 Elsevier B.V. All rights reserved.