An evaluation is presented of three photovoltaic cells having the layer structure Au-CuInSe2-CdS-ZnO-ln, which were fabricated with monocrystalline p-type wafers cut from Bridgman-grown CuInSe2 ingots. On these cells, measurements were made, which included illuminated and dark current-voltage characteristics, capacitance-voltage characteristics, and estimation of minority carrier diffusion lengths by the photocurrent-capacitance method. The values of conversion efficiency, short-circuit current density, open circuit voltage, and fill factor, measured under sunlight, all increased from cell-to-cell with decrease of dark series area-resistance and also, in a general way, with increased Mott-Schottky slope hole concentration. The results also showed the existence of a possible correlation between estimated diffusion length and Mott-Schottky slope concentration. One cell yielded an initial solar conversion total area efficiency of 11.4% (active area efficiency, 12.5%) without an antireflection (AR) coating on a total cell area of 0.138 cm(2) (c) 2004 Elsevier B.V. All rights reserved.