Ternary compound copper indium disulfide CuInS2 is one of the most promising absorber materials for high efficient and low-cost photovoltaic applications. This paper reports the successful deposition of uniform CuInS2 films with well-controlled stoichiometry, through the use of a novel Electrostatic Spray Assisted Vapor Deposition (ESAVD) method. The effects of chemical precursor composition and droplets charge on the film microstructures are discussed. The microstructures and properties of the as-deposited films are characterized using a combination of X-ray diffraction (XRD), scanning electron microscopy (SEM), Energy Dispersive X-ray (EDX), and UV transmittance spectra. A CdS/CuInS2 heterojunction is also produced onto an ITO glass substrate to evaluate the photovoltaic property of the film. The result shows that ESAVD method is a very promising technique to produce high quality CuInS2 films with low cost and high efficiency. (c) 2004 Elsevier B.V All rights reserved.