Submicron Patterning of Ta, NiFe, and Pac-man Type Ta/NiFe/Ta Magnetic Elements

Hyun-Wook Ra; Kwang Sup Song; Yoon-Bong Hahn

Korean Journal of Chemical Engineering, Vol.22, No.5, 793-796, September, 2005

DOI10.1007/BF02705801 Export Citation

Submicron Patterning of Ta, NiFe, and Pac-man Type Ta/NiFe/Ta Magnetic Elements

Hyun-Wook Ra, Kwang Sup Song¹, and Yoon-Bong Hahn^†

School of Chemical Engineering and Technology, Nanomaterials Processing Research Center, Chonbuk National University, Chonju 561-756, Korea
¹Korea Institute of Energy Research, Daejeon 305-343, Korea

E-mail:

Submicron patterning of Ta, NiFe, and Pac-man type magnetic elements of Ta/NiFe/Ta has been carried out in inductively coupled plasmas (ICPs) of Cl2/Ar. Etch behavior was quite dependent on materials and plasma parameters. An ion-enhanced etch mechanism played a critical role for desorption of metal chloride etch products. Sidewall contamination with etch products was observed at a higher Cl2 concentration (>50%). Compared to relatively damaged surfaces and profiles by the ion milling method, the ICP etching technique produced clear, smooth, and well-defined Pac-man type elements.

Keywords:Magnetic Elements;Submicron Patterning;Dry Etching;Pac-man Type

[References]

Cho HG, Kim YK, Lee SR, J. Korean Phys. Soc., 41, 753 (2002)
Cho H, Lee KP, Jung KB, Pearton SJ, Marburger J, Sharifi F, Hahn YB, Childress JR, J. Appl. Phys., 87, 6397 (2000)
Fang TN, Zhu JG, J. Appl. Phys., 87, 7061 (2000)
Gokan H, Esho S, J. Vac. Sci. Technol., 18, 23 (1981)
Hahn YB, Hays DC, Cho H, Jung KB, Abernathy CR, Donovan SM, Pearton SJ, Han J, Shul RJ, Mater. Sci. Eng, B60, 95 (1999)
Hahn YB, Hays DC, Cho H, Jung KB, Abernathy CR, Pearton SJ, Appl. Surf. Sci., 147, 207 (1999)
Hahn YB, Pearton SJ, Korean J. Chem. Eng., 17(3), 304 (2000)
Im YH, Choi CS, Hahn YB, J. Korean Phys. Soc., 39, 617 (2001)
Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, J. Vac. Sci. Technol. A, 17(4), 2223 (1999)
Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, J. Vac. Sci. Technol. A, 17(4), 2223 (1999)
Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, J. Appl. Phys., 85, 4788 (1999)
Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, Appl. Surf. Sci., 140, 215 (1999)
Liberman MA, Lichtenberg AJ, Principles of Plasma Discharges and Materials Processing, John-Wiley and Sons, N. Y. (1994)
Park HJ, Ra HW, Song KS, Hahn YB, Korean J. Chem. Eng., 21(6), 1235 (2004)
Park JS, Park HJ, Hahn YB, Yi GC, Yoshikawa A, J. Vac. Sci. Technol. B, 21(2), 800 (2003)
Park MH, Hong YK, Gee SH, Erickson DW, Appl. Phys. Lett., 83, 329 (2003)
Portier X, Petford-Long AK, Appl. Phys. Lett., 76, 754 (2000)
Ra HW, Park HJ, Kim KJ, Kim WY, Hahn YB, Korean Chem. Eng. Res., 43(1), 76 (2005)
Ra HW, Hahn YB, Song KS, Park MH, Hong YK, J. Vac. Sci. Technol. A, 22(6), 2388 (2004)
Tsang CH, J. Appl. Phys., 69, 5393 (1991)
Vartuli CB, Pearton SJ, Lee JW, Mackenzie JD, Abernathy CR, Shul RJ, Constantine C, Barratt C, J. Electrochem. Soc., 144(8), 2844 (1997)
Vasile MJ, Mogab CJ, J. Vac. Sci. Technol. A, 4, 1841 (1986)
Zheng Y, Zhu JG, J. Appl. Phys., 81, 5471 (1997)

[Related Articles]

[1] Cho HG, Kim YK, Lee SR, J. Korean Phys. Soc., 41, 753 (2002)

[2] Cho H, Lee KP, Jung KB, Pearton SJ, Marburger J, Sharifi F, Hahn YB, Childress JR, J. Appl. Phys., 87, 6397 (2000)

[3] Fang TN, Zhu JG, J. Appl. Phys., 87, 7061 (2000)

[4] Gokan H, Esho S, J. Vac. Sci. Technol., 18, 23 (1981)

[5] Hahn YB, Hays DC, Cho H, Jung KB, Abernathy CR, Donovan SM, Pearton SJ, Han J, Shul RJ, Mater. Sci. Eng, B60, 95 (1999)

[6] Hahn YB, Hays DC, Cho H, Jung KB, Abernathy CR, Pearton SJ, Appl. Surf. Sci., 147, 207 (1999)

[7] Hahn YB, Pearton SJ, Korean J. Chem. Eng., 17(3), 304 (2000)

[8] Im YH, Choi CS, Hahn YB, J. Korean Phys. Soc., 39, 617 (2001)

[9] Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, J. Vac. Sci. Technol. A, 17(4), 2223 (1999)

[10] Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, J. Vac. Sci. Technol. A, 17(4), 2223 (1999)

[11] Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, J. Appl. Phys., 85, 4788 (1999)

[12] Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, Appl. Surf. Sci., 140, 215 (1999)

[13] Liberman MA, Lichtenberg AJ, Principles of Plasma Discharges and Materials Processing, John-Wiley and Sons, N. Y. (1994)

[14] Park HJ, Ra HW, Song KS, Hahn YB, Korean J. Chem. Eng., 21(6), 1235 (2004)

[15] Park JS, Park HJ, Hahn YB, Yi GC, Yoshikawa A, J. Vac. Sci. Technol. B, 21(2), 800 (2003)

[16] Park MH, Hong YK, Gee SH, Erickson DW, Appl. Phys. Lett., 83, 329 (2003)

[17] Portier X, Petford-Long AK, Appl. Phys. Lett., 76, 754 (2000)

[18] Ra HW, Park HJ, Kim KJ, Kim WY, Hahn YB, Korean Chem. Eng. Res., 43(1), 76 (2005)

[19] Ra HW, Hahn YB, Song KS, Park MH, Hong YK, J. Vac. Sci. Technol. A, 22(6), 2388 (2004)

[20] Tsang CH, J. Appl. Phys., 69, 5393 (1991)

[21] Vartuli CB, Pearton SJ, Lee JW, Mackenzie JD, Abernathy CR, Shul RJ, Constantine C, Barratt C, J. Electrochem. Soc., 144(8), 2844 (1997)

[22] Vasile MJ, Mogab CJ, J. Vac. Sci. Technol. A, 4, 1841 (1986)

[23] Zheng Y, Zhu JG, J. Appl. Phys., 81, 5471 (1997)