Comparative Study of Diamond Films Grown on Silicon Substrate Using Microwave Plasma Chemical Vapor Deposition and Hot-Filament Chemical Vapor Deposition Technique

Mushtaq Ahmad Dar; Young-Soon Kim; Shafeeque G. Ansari; Hyung-il Kim; Gilson Khang; Chu Van Chiem; Hyung-Shik Shin

Korean Journal of Chemical Engineering, Vol.22, No.5, 770-773, September, 2005

Mushtaq Ahmad Dar, Young-Soon Kim, Shafeeque G. Ansari, Hyung-il Kim , Gilson Khang¹, Chu Van Chiem², and Hyung-Shik Shin^{1, †}

Thin Film Technology laboratory, School of Chemical Engineering, Chonbuk National University, Duck-jin gu, Chonju 561-576, Korea
¹Department of Polymer/Nano Science and Technology, Chonbuk National University, Duck-jin gu, Chonju 561-576, Korea
²Institute of Materials Science, Vietnamese Academy of Science and Technology, Cau Giay District, Hanoi, Vietnam

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Diamond films on the p-type Si(111) and p-type(100) substrates were prepared by microwave plasma chemical vapor deposition (MWCVD) and hot-filament chemical vapor deposition (HFCVD) by using a mixture of methane CH4 and hydrogen H2 as gas feed. The structure and composition of the films have been investigated by Xray Diffraction, Raman Spectroscopy and Scanning Electron Microscopy methods. A high quality diamond crystalline structure of the obtained films by using HFCVD method was confirmed by clear XRD-pattern. SEM images show that the prepared films are polycrystalline diamond films consisting of diamond single crystallites (111)-orientation perpendicular to the substrate. Diamond films grown on silicon substrates by using HFCVD show good quality diamond and fewer non-diamond components.

Keywords:Diamond;HFCVD;MWCVD

[References]

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Ansari SG, Seo HK, Kim GS, Dar MA, Shahjahan M, Shim HS, Korean J. Chem. Eng., 21(1), 262 (2004)
Bundy FP, J. Chem. Phys., 38, 631 (1963)
Chiem CV, Seo HK, Ansari SG, Kim GS, Seo JM, Shin HS, Korean J. Chem. Eng., 20(6), 1154 (2003)
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Stammler M, EisenbeiβRistein JH, Neubauer J, Gobbels M, Ley L, Diam. Relat. Mat., 11, 504 (2002)
Stephan PM, Hay RA, Dean CD, Diam. Relat. Mat., 1, 710 (1992)
Yin LW, Li MS, Zou ZD, Sun DS, Hao ZY, Gong ZG, Yao ZY, Appl. Phys. A-Mater. Sci. Process., 72, 373 (2001)

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[Related Articles]

[1] Alder BJ, Charistian RH, Phys. Rev. Lett., 7, 367 (1961)

[2] Ansari SG, Seo HK, Kim GS, Dar MA, Shahjahan M, Shim HS, Korean J. Chem. Eng., 21(1), 262 (2004)

[3] Bundy FP, J. Chem. Phys., 38, 631 (1963)

[4] Chiem CV, Seo HK, Ansari SG, Kim GS, Seo JM, Shin HS, Korean J. Chem. Eng., 20(6), 1154 (2003)

[5] Choi Y, Park YC, Kim JY, Rhee SW, Moon SH, HWAHAK KONGHAK, 32(6), 802 (1994)

[6] Ferrari AC, Robertson J, Phys. Rev. B, 64, 075414 (2001)

[7] Ferrari AC, Diam. Relat. Mat., 11, 1053 (2002)

[8] Ferrari AC, Rodil SE, Robertson J, Phys. Rev. B, 15, 155306 (2003)

[9] Kanda H, Akaishi M, Yamaoka S, Appl. Phys. Lett., 65, 784 (1994)

[10] Lux B, Haubner R, Renard R, Diam. Relat. Mat., 1, 1035 (1992)

[11] Petrov P, Dimitrov DB, Papadimitriou D, Beshkov G, Krastev V, Georgiev CH, Appl. Surf. Sci., 151, 233 (1999)

[12] Shendorova OA, Zhinob VV, Brenner DW, Crit. Rev. Solid State Mat. Sci., 27, 227 (2002)

[13] Stammler M, EisenbeiβRistein JH, Neubauer J, Gobbels M, Ley L, Diam. Relat. Mat., 11, 504 (2002)

[14] Stephan PM, Hay RA, Dean CD, Diam. Relat. Mat., 1, 710 (1992)

[15] Yin LW, Li MS, Zou ZD, Sun DS, Hao ZY, Gong ZG, Yao ZY, Appl. Phys. A-Mater. Sci. Process., 72, 373 (2001)