The electrochemical oxidation characteristics of TiN thin films by atomic force microscopy (AFM) was investigated. The TiN films were produced on silicon substrate by atomic layer chemical vapor deposition (ALCVD). The anodization parameters,, such as the anodized voltages, the oxidation times, and how they affected the creation and growth of the oxide nanostructures were explored. The results showed that the height of the TiN oxide dots grew as a result of either the anodization time or the anodized voltage being increased. The oxide growth rate was dependent on the anodized voltage and the resulting electric field strength. Furthermore, the oxide growth rate decreased immediately when the electric field strength reached (2-3) x 10(7) V/cm rapidly decrease to a growth rate of 0. © 2004 Elsevier Ltd. All rights reserved.