VOx thin films was prepared on Pt/Ti/SiO2/Si substrate at room temperature by rfmagnetron sputtering method. The deposition rate of VOx thin films was investigated as a function of dc power and working gas. As dc power increased, the deposition rate increased. However, as the O2 concentration in a O2/Ar mixture increased, the deposition rate decreased. The phase change of deposited VOx thin films was investigated by x-ray diffraction. The plane and cross-sectional views of VOx thin films before and after annealing were observed by field emission scanning electron microscopy. Metal insulator transition property of VO2 thin films was measured using current-voltage measurement.