Using the PbO-B2O3-Bi2O3 flux system, (EuTbBi)(3)(FeAlGa)(5)O-12 (EuTbIG) films were grown on (GdCa)(3)(GaMgZr)(5)O-12 (SGGG) substrates for optical devices by the liquid phase epitaxial (LPE) method. The grown films' growth and magnetic domain wall were observed as a function of the Fe2O3/(Al2O3+Ga2O3)(R2) molar ratio by magnetic force microscope (MFM). As the grown films decreased the R2 molar ratio, the saturation magnetization of the grown films showed a tendency to decrease from 250 to 150 Oe. Also, we observed that the R2 molar ratio did not affect the surface morphology and thickness of the grown films, but it did affect the magnetic domain wall. (C) 2004 Elsevier B.V. All rights reserved.