High quality p(+)/n ultrashallow junctions were fabricated by high dose plasma doping and two step annealing involving low-temperature furnace annealing and excimer laser annealing. Without a preamorphization process, laser annealing is effective in terms Of activation and annealing. Meanwhile, the junction depth can be controlled by the low-temperature annealing process prior to the laser annealing. By combining low-temperature preannealing and laser annealing, ultrashallow (junction depth similar to22 nm), low sheet resistance (similar to275 Omega/sq.), and a defect-free p(+)/n junction can be obtained without preamorphization. (C) 2005 American Vacuum Society.