The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC :O)/oxide sandwiched structure were investigated. The memory window is decreased with the increasing of the oxygen content in the SiC :O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiC :O film, which is attributed to the high barrier height induced by electron trapping in the SiC :O film. (C) 2005 The Electrochemical Society.