The syntheses, structures, and electroluminescent properties are described for two new lanthanice complexes Ln(HFNH)(3)phen [HFNH = 4,4,5,5,6,6,6-heptafluoro-1-(2-naphthyl)hexane-1,3-dione; phen = 1,10-phenanthroline; Ln = Eu3+ (1), Sm3+ (2)]. Both complexes exhibit bright photoluminescence at room temperature (RT) due to the characteristic emission of Eu3+ and Sm3+ ion. Several devices using the two complexes as emitters were fabricated. The performances of these devices are among the best reported for devices using europium complex and samarium complex as emitters. The device based on 1 with the structure ITO/TPD (50 nm)/1:CBP (10%, 40 nm)/BCP (20 nm)/AIQ (30 nm)/LiF (11 nm)/Al (200 nm) exhibits the maximum brightness of 957 cd/m(2), current efficiency of 4.14 cd/A, and power efficiency of 2.28 Im/W with a pure red Eu3+ ion emission. Especially, at the high brightness of 200 cd/m(2), the device of 1 still has a high current efficiency of 2.15 cd/A. The device of 2 with a three-layer structure of ITO/TPD (50 nm)/2 (50 nm)/BCP (20 nm)/LiF (1 nm)/Al (200 nm) gives the maximum brightness of 42 cd/m(2), current efficiency of 0.18 cd/A. By the comparison of the electroluminescent properties of devices based on Eu(TTA)(3)phen (TTA = 2-thenoyltrifluoroacteonate) and 1, we conclude that the polyfluoration on the alkyl group of the ligand and the introduction of the long conjugate naphthyl group into the ligand improve the efficiency of 1-doped devices, especially at high current densities.