A 3-D model for the deposition rate in a sputtering system is developed. It compares well with experiments given the dc magnetron sputtering system used for the study. Both fast-moving and slow-moving depositing particles are considered in the model development, since the depositing flux consists of both. A distributive source model is used for calculating the deposition rate due to the slow-moving particles. Gas rarefaction due to heating affects the dependence of deposition rate on power as well as pressure. Film uniformity depends on the location of the substrate. The shape profile of film deposition is affected by the size of the etch track. The effect of process parameters on the scattering is shown in terms of the proportion of the diffused flux as a function of power, pressure and target material. For a given power, pressure and target-substrate distance, copper (Cu) particles show less scattering effect than do aluminum (Al) particles. (C) 2004 Elsevier B.V. All rights reserved.