Focused ion beam (FIB) induced processes for material etching and deposition have proven successful in integrated circuit device modification applications. Current FIB metal deposition processes are typically limited to resistivities in the range of 150-200 muOmega cm due to included impurities; however, today's high-frequency devices require very low interconnect resistivity. The organometallic precursor material copper (I) hexafluoroacetylacetonate trimethylvinylsilane, or Cu(hfac)TMVS for FIB-assisted metal deposition was investigated. 50 kV Ga+ ions were scanned over a defined area of an Al/SiO2 resistivity test substrate in the presence of the precursor vapor, using two different 50 kV FIB column designs with beam currents from 49 to 2070 pA and current densities of 13-36 A cm(-2). Resistivity was measured by the four-point probe method. This study verifies prior reported resistivities of less than or equal to50 muOmega cm at room T across all deposition parameters for film growth yields less than or equal to0.18 muOmega(3) nC(-1) ion dose. Depositing on a heated substrate yields considerably lower film resistivity at temperatures near 100 degreesC; resistivities as low as 18.8 muOmega cm - were achieved at the high growth yield of 0.32 mum(3) nC(-1) ion dose. At room temperature, the resistivity varied inversely but nonlinearly with growth yield across all depositions. Auger electron spectroscopy revealed Cu content of similar to60 at. % in the lowest resistivity films at all substrate temperatures. Via filling with aspect ratios >9:1 is demonstrated. (C) 2004 American Vacuum Society.