A p-n homojunction was obtained by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film. The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p-n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I-V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode. (C) 2004 Elsevier B.V. All rights reserved.