We investigated the growth of GaAs1-xSbx(x less than or equal to 0.4) and GaAs epilayers with heavy Sn doping using molecular-beam epitaxy, and characterized the doping concentration as a function of Sn K-cell temperature. The carrier concentration was found to be expressed as a function of the reciprocal Sn effusion cell temperature with respect to GaAsl(1-x)Sb(x)(x=0.15) layers. At cell temperatures of 670-800degreesC, carrier concentrations ranging from 5 X 10(16) to 8 X 10(18) cm(-3) showed a simple exponential dependency. When the ratios of TO-mode to LO-mode intensities in GaAs1-xSbx(x =0.15) layers were measured as a function of Sn-cell temperature by micro-Raman scattering, the peak intensity ratio was linearly proportional to the Sn-cell temperature in the range of 700-900degreesC. (C) 2004 American Vacuum Sociel.