A boron doped Si1-xGex thin film has been successfully prepared on a quartz (SiO2) glass substrate at room temperature (RT) by irradiating an intense, pulsed, ion beam on a Si-Ge-B pellet. As a result, in situ boron doped Si1-xGex thin film was found to be crystallized. In addition, by van der Pauw measurement, the resistivity, carrier density, and mobility of the thin film were observed as P=2.3 X 10(-3) Omega cm, n=7.2 X 10(20) cm(-3), and mu=3.8 cm(2)/ Vs, respectively. Thus, the boron doped Si1-xGex thin film was clarified to be not only crystallized but also activated without heat treatment. (C) 2004 American Vacuum Society.