It has been known that overpolishing in chemical mechanical polishing (CMP) depends on pattern selectivity as a function of density and pitch, and use of a fixed abrasive pad is one method which can improve the pattern selectivity. This paper introduces the fixed abrasive pad using the swelling characteristic of hydrophilic polymers, which can acquire self-conditioning during CMP. When applied to tungsten blanket wafers, the fixed abrasive pad showed better pattern selectivity compared to the general polishing process, and, also, erosion was measured for similar to 20 nm or less at even 100% overpolishing. (C) 2004 The Electrochemical Society.