화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.151, No.12, C781-C785, 2004
Bottom-up fill for submicrometer copper via holes of ULSIs by electroless plating
The bottom-up fill of copper in fine via holes is reported in electroless copper plating with the addition of bis(3-sulfopropyl) disulfide (SPS). When the concentration of SPS in the plating bath was varied from 0.05 to 0.5 mg/L with a plating time of 10 min, the ratio of the Cu thickness at the bottom of the hole (T-b) to that at the surface (T-s), called the bottom-up ratio, increased from 1.05 to 2.8 for a empty set 1.0 mum hole. The bottom-up ratio increases with SPS concentration and decreases with an increase in hole diameter. X-ray diffraction structure analyses and cross-sectional transmission electron microscopy observations indicated that the grain size of Cu film was reduced by the SPS addition, but Cu(111) texture was enhanced by the SPS addition. Bottom-up fill may be attributed to a higher SPS concentration at the surface than at the bottom of the holes due to SPS incorporation in the Cu film and diffusion-limited flux of SPS molecules into fine holes. (C) 2004 The Electrochemical Society.