Silicon carbide nanobelts have been prepared by a reaction of CH3CH2OH, SiCl4, and Li in an autoclave at 600 degreesC. According to X-ray powder diffraction, the nanobelts crystallize with the structure of 3C-SiC. Electron microscopy investigations have revealed that the nanobelts are usually 50-200 nm wide, 20-60 nm thick, and up to tens of micrometers long. Some unique optical properties are found in the Raman spectroscopy and photoluminescence emission from the 3C-SiC nanobelts, which are different from previous observations of 3C-SiC materials. A possible lithium-assisted growth mechanism for the nanobelts was proposed.