Vertically aligned InP nanowires were successfully grown on GaP(111)B substrates by metalorganic vapor phase epitaxy under a Au-catalyzed vapor-liquid-solid growth process. An nanoparticles were used as the seed to control the nanowire diameter in the nanoscale range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies showed highly dense nanowires with homogeneous diameter along their length axis, and had zinc-blende structure with <111> growth direction. Photoluminescence (PL) measurements showed a significant blueshift in the spectral peak position compared to bulk InP due to the quantum confinement of the carriers in the nanowires. (C) 2004 Elsevier B.V. All rights reserved.