We investigated the Ge migration and Ge dot positioning behavior on a patterned Si(001) over a wide Ge growth temperature range. Ge migration length was directly measured using Si(001) with a sink structure for Ge, and Ge migrated over 2.8 mum at surface temperatures of more than 700 degreesC. At higher temperatures, Ge migrated and Ge dots formed at more stable positions such as in convex and concave structures which function as an anchor for thermal excitation. On the basis of the results, we proposed a new method of Ge dot formation using the Ge long migration and Ge dot-anchoring effects. With this method, we demonstrated the Ge dot array formation using small pyramids or pits as an anchor. The sizes and positions of the dots are artificially determined by the amount of Ge growth and anchor position. A pit is most effective as a position-controlling anchor. (C) 2004 Elsevier B.V. All rights reserved.