Effects of structural changes near the interface, the implantation dose and the precipitate morphology on photoluminescence (PL) properties of ion-beam synthesized (IBS) beta-FeSi2 have been investigated. The intrinsic PL spectrum attributed to the interband transition of beta-FeSi2 was found by examining the dependence of the PL peak energy on temperature and the excitation power. (C) 2004 Elsevier B.V. All rights reserved.