The study of Cu/Ni thin films obtained by simultaneous standard magnetron sputtering (in argon atmosphere) and self-sustained magnetron sputtering (without any working gas) has been presented. Sputtering processes were performed using two separate magnetrons (50 mm in target diameter). To deposit Cu and Ni films in self-sustained sputtering mode a very high target power density was necessary (a few hundreds of W/cm(2)). During one sputtering process, the Cu/Ni films of different composition were deposited on a couple of glass substrates. The Cu/Ni films constitution was determined from the thickness distribution characteristics of Cu and Ni films deposited separately in relation to the total Cu/Ni films thickness. The films, containing Cu44%Ni56%, have properties like bulk constantan. As for these films, the resistivity and temperature coefficient of resistance were respectively: rho congruent to 65 mu Omega cm, TCR congruent to 20 ppm/K (Cu,/Ni films obtained in argon atmosphere-standard sputtering) and rho congruent to 45 muOmega cm, TWR congruent to 400 ppm/K (Cu/Ni films obtained without the argon presence-sustained self-sputtering). The presence of argon 'impurity' caused the decrease of TCR of Cu/Ni films. (C) 2003 Elsevier B.V. All rights reserved.