To raise Curie temperature (T-C) for Gd, we have prepared Gd thin films by controlling deposition conditions. With raising substrate temperature (T-S) during deposition, the crystallinity was improved remarkably. The volume per Gd atom compressed rapidly with raising T-S up to 400 degreesC and then slightly expanded above this temperature. The former compression is due to progress of crystallization with increase in T-S, while the latter slight expansion is due to synthesis of interstitial alloy by capturing H-2 in residual atmosphere. The T-C increased with raising T-S, although the temperature did not rise by further injection of hydrogen atoms into Gd. Especially, the T-C for the film with T-S = 600 degreesC was 292.5 +/- 0.5 K. We speculate that the increase in T-C is caused by the combination with contribution of high crystallinity and expansion of volume by synthesis of interstitial alloy. (C) 2003 Elsevier B.V. All rights reserved.