The properties of nitrogen-doped amorphous SiC films irradiated by pulse electron beams are presented. The RBS results showed that the concentrations of Si, C and N in the films are practically the same. The concentration of hydrogen was determined by the ERD method and the value is approximately 20 at.%. The films contain a small amount of oxygen. IR results showed the presence of Si-C, Si-H, C-H and Si-O bonds. The I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates were investigated. The results showed that the film conductivity increased by about two orders of magnitude as nitrogen fraction was increased from 10 to 14 at.%. The film conductivity was enhanced by about one order of magnitude as a result of two-fold increase of pulse electron beam irradiation. (C) 2003 Elsevier B.V. All rights reserved.