Thin Solid Films, Vol.450, No.1, 173-177, 2004
Infrared spectroscopic ellipsometry applied to the characterization of nano-structures of silicon IC manufacturing
A new automated 300-mm metrology tool using infrared spectroscopic ellipsometry is presented. After a description of the specifications of the instrument with special attention on the spot size, the instrument specifications are described and different applications of the technique related to the IC technology are presented. We show in particular that physical and chemical information on new low-k dielectric materials can be obtained independently. Depth information can also be deduced in a non-destructive way for contact trenches in dielectric layers. (C) 2003 Elsevier B.V. All rights reserved.