In this study Cu/Al2O3/CU thin film capacitors were fabricated using electron beam evaporation on glass substrates. The main purpose of this work was to develop a practical method for the preparation of thin film capacitors without etching process. Oxygen and argon ions were used for ion beam assisted deposition of the Al2O3 thin films. All processes were completely dry using the stainless mask for the deposition of top electrode thin films. The stoichiometry of the deposited Al2O3 films was measured by Rutherford backscattering spectroscopy, and the nano-morphology of the Al2O3 films was observed by atomic force microscopy. Matrix arrays of capacitors were successfully produced and the capacitances were measured. (C) 2003 Elsevier B.V. All rights reserved.