n-CdS1-xTex (0 less than or equal to x less than or equal to 1) thin films were deposited by a chemical bath deposition technique on highly conducting, precleaned stainless steel substrates and were used in a photoelectrochemical conversion process. The as-grown films exhibited photoactivity in an aqueous 0.5 M NaOH + 0.5 M Na2S + 0.5 M S (pH 12.6) electrolyte. An interface between n-CdS1-xTex semiconductor photoelectrode and an electrolyte redox couple was formed and investigated through the capacitance-voltage, current-voltage and photovoltaic characteristics. A brief discussion is made on the properties of the semiconductor/electrolyte Schottky barrier with reference to the experiments performed and the photoelectrode composition. The observed results on the capacitance-voltage and current-voltage measurements in dark are compared with the photovoltage measurements. The measurements on the characteristic photovoltaic properties showed a significant enhancement in the cell performance after addition of Te in to US (x=0.1). (C) 2003 Elsevier B.V. All rights reserved.