Indium Tin Oxide (ITO) thin films have been deposited by the Sol-Gel Dip-Coating technique, the starting solutions being prepared from chlorides. These multilayered films were crystallized by means of a classical heat treatment at temperatures ranging from 500 to 600 degreesC. Five stacked layers are necessary to obtain a global electrical resistivity value of 2.9 x 10(-3) Omega cm, for 500 degreesC annealed film. The paper focuses on the study of the structure of such multilayered deposits, and on the densification process, using transmission electron microscopy, Rutherford Back-scattering Spectrometry and electrical resistivity measurements. This analysis reveals structural inhomogeneities and different crystallite growth processes as a function of annealing temperature and number of deposited layers. (C) 2003 Elsevier B.V. All rights reserved.