Single crystal growth of Ge1-xSix alloys with Si composition ranging from 2 to 15 at. %. using the traveling solvent method (TSM) is presented. The growths were carried out using Ge <111> seeds or a self-seeding method. Electron microprobe, Laue x-ray, and Hall effect techniques were used to characterize the quality of the materials. The standard deviations associated with the composition protiles along and transverse to the growth direction were less than 0.4 and 0.3 at. %, respectively. A change in conductivity from n to p type in the TSM samples was observed at a Si composition <5 at.%. (C) 2004 American Vacuum Society.