High-dose implantation processes of N+ + C+ + BF2+ have been performed on Si(100) substrates at 600 degreesC. Additional simple (N+, C+) and double (N+ + C+ and N+ + BF2+) been produced to sequentially study the synthesis of different semiconductor compounds. FTIR spectra of all the samples before and after thermal annealing at 1200degreesC have been acquired. When N+ and C+ are co-implanted the formation of a ternary phase of SiCN nature is suggested, meanwhile in the case of N+ and BF2+ competition between BN and Si3N4 takes place. The sequential implantation of the three species produces a stable surface region as deduced from the AES profiles. IR and XPS measurements suggest the formation of a SiCBxNy mainly formed by SiC with a significant content of B and N (similar to20%). (C) 2004 American Vacuum Society.