화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Chemical Engineering, Vol.22, No.2, 334-338, March, 2005
DOI10.1007/BF02701506  Export Citation
Two-Step Growth of ZnO Films on Silicon by Atomic Layer Deposition
Suk Lee, Yong Hwan Im, and Yoon-Bong Hahn†
  • School of Chemical Engineering and Technology, and Nano Materials Research Center, Chonbuk National University, Chonju 561-75, Korea
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Two-step growth of ZnO by atomic layer deposition at low temperatures was performed to grow quality ZnO films on silicon substrates: first, the growth of a buffer layer at 130 ℃ and second, the growth of the main layer at 210 ℃. Structural and optical properties of the ZnO films deposited on ZnO-buffer/Si(111) were investigated as a function of buffer layer thickness. The films showed a strong UV emission at 380 nm and a weak green emission at 520-570 nm. The ZnO films deposited on a 327 Å buffer layer showed overall the best surface morphology and structural and optical properties.
Keywords:ZnO;Two-Step Growth;Buffer Layer;Atomic Layer Deposition;Si Substrate
  1. Ashrafi AA, Ueta A, Kumano H, Suemune I, J. Cryst. Growth, 221, 435 (2000) 
  2. Bang KH, Hwang DK, Myoung JM, Appl. Surf. Sci., 207, 359 (2003) 
  3. Chen YF, Hong S, Ko H, Nakajima M, Yao T, Appl. Phys. Lett., 76, 559 (2000) 
  4. Fuke S, Teshigawara H, Kurahara K, Takano Y, Ito T, Yanagihara M, Ohtsuka K, J. Appl. Phys., 83, 764 (1998) 
  5. Hiramatsu K, Itoh S, Amano H, Akasaki I, Kuwano N, Shiraishi T, Oki K, J. Cryst. Growth, 98, 209 (1991) 
  6. Jeong SH, KIm IS, Kim JK, Lee BT, J. Cryst. Growth, 264, 327 (2004) 
  7. Jeong SH, Kim IS, Kim SS, Kim JK, Lee BT, J. Cryst. Growth, 264, 110 (2004) 
  8. Kim TY, Lee SH, Mo YH, Nahm KS, Kim JY, Suh EK, Kim M, Korean J. Chem. Eng., 21(3), 733 (2004)
  9. Ko HJ, Yao T, Chen Y, Hong SK, J. Appl. Phys., 92, 4354 (2002) 
  10. Li BS, Liu YC, Shen DZ, Lu YM, Zhang JY, Kong XG, Fan XW, Zhi ZZ, J. Vac. Sci. Technol. A, 20(1), 265 (2002) 
  11. Lim JW, Park HS, Kang SW, J. Appl. Phys., 88, 6327 (2000) 
  12. Lin B, Fu Z, Zia Y, Appl. Phys. Lett., 79, 943 (2001) 
  13. Nahhas A, Kim HK, Blachere J, Appl. Phys. Lett., 78, 1511 (2001) 
  14. Nakamura T, Yamada Y, Kusumori T, Minoura H, Muto H, Thin Solid Films, 411(1), 60 (2002) 
  15. Ogata K, Kawanishi T, Maejima K, Sakurai K, Fujita S, Fugita S, J. Cryst. Growth, 237-239, 553 (2002) 
  16. Ohgaki T, Ohashi N, Kakermoto H, Wada S, Adachi Y, Haneda H, Tsurumi T, J. Appl. Phys., 93, 1961 (2002) 
  17. Puchert MK, Timbrell PY, Lamb RN, J. Vac. Sci. Technol. A, 14(4), 2220 (1996) 
  18. Ruthe KC, Cohen DJ, Barnett SA, J. Vac. Sci. Technol. A, 22, 2446 (2004) 
  19. Tamargo MC, II-VI Semiconductor Materials and Their Applications, Taylor & Francis, New York (2002)
  20. Vanheusden K, Seager CH, Warren WL, Tallant DR, Voiget JA, Appl. Phys. Lett., 68, 403 (1996) 
  21. Ye Y, Gu S, Zhu S, Chen T, Hu L, Qin F, Zhang R, Shi Y, Zheng Y, J. Cryst. Growth, 243, 151 (2002) 
  22. Zhang Y, Du G, Liu B, Zhu HC, Yang T, Li W, Liu D, Yang S, J. Cryst. Growth, 262, 456 (2004)