We report Raman scattering studies on two well characterized multi-quantum well samples of InGaAs/InP-one having 4 equal wells of 7.8 nm width (sample A) while the other has 4 unequal wells of widths 2.5, 3.9, 7.8 and 15 nm (sample 13). Raman spectra of both these samples show two strong peaks at approximately 290 and 330 cm(-1) due to bulk InGaAs and InP, respectively. Weak peaks at 245.7, 263.1, 276.8 cm(-1) were observed apart from the InGaAs peak and a shoulder at 316.1 cm(-1) near InP peak in sample A. Periodic Raman peaks were observed in both samples due to folded zone LA phonons. The presence of interfacial layers at the hetero-interfaces was evident from Raman lines. (C) 2003 Elsevier B.V. All rights reserved.