Polycrystalline and ferroelectric Pb (Zr-0.65,Ti-0.35)O-3 and (Pb,La-0.08) (Zr-0.65, Ti-0.35)O-3 films were obtained on platinized silicon by sol-gel processing. The structural, microstructural and electrical properties were examined as function of annealing treatments and compared. Surface morphology and microstructure of the films were studied with scanning electron microscopy The lattice constant of the film, crystallized in the perovskite phase with rhombohedral crystal structure, was 4.06 Angstrom. Relative dielectric constants of Ph (Zr-0.65,Ti-0.35)O-3 and (Pb,La-0.08) (Zr-0.65, Ti-0.35)O-3 films at 10 kHz were 720 and 440, respectively, and the loss tangent values were 0.045 and 0.038, respectively. Remanent polarization and coercive field of the Pb (Zr-0.65,Ti-0.35)O-3 films were 16 muC/cm(2) and 57 kV/cm, respectively, whereas that of (Pb,La-0.08) (Zr-0.65, Ti-0.35)O-3 films were 6 muC/cm(2) and 47 kV/cm. (C) 2003 Elsevier B.V. All rights reserved.