We evaluated HfO2 films deposited by metal organic chemical vapor deposition using the Hf(N(C2H5)(2))(4)/O-2 gas system. The surface morphology and step coverage were simultaneously improved by increasing the deposition temperature. This improvement was achieved because the surface diffusion of reactants and/or their fragments was enhanced. At a low deposition temperature, N in Hf(N(C2H5)(2))(4) might disturb the surface diffusion of Hf, causing poor surface morphology and step coverage. (C) 2003 Elsevier B.V. All rights reserved.