Some experiments reported previously [e.g., K. Sasaki et al., J. Appl. Phys. 88, 5585 (2000)] show that fluorocarbon films can be a source of CFx radicals in fluorocarbon plasmas. In the present article, we examined the relationship between the degree of surface production and the chemical bonds of fluorocarbon films synthesized by various fluorocarbon plasmas with the addition of H-2. The degree of surface production was evaluated from the absolute flux of CFx (x= 1,2) radicals desorbed from fluorocarbon films. The composition of the chemical bonds was analyzed by x-ray photoelectron spectroscopy. As a result, significant surface production (> 3 x 10(5) cm(-2) s(-1)) was observed when fluorocarbon film had the dominant -CF2 bond. The change in the dominant bond from -CF2 to -C-C resulted in the decrease in the degree of surface production. (C) 2004 American Vacuum Society.