Physical and electrical properties of hafnium silicate (HfSixOy) dielectric films prepared by room-temperature UV/ozone (O-3) oxidation of hafnium silicide (HfSi2) are reported. Angle-resolved x-ray photoelectron spectroscopy was used to determine chemical bonding at the film interface and within the bulk film. These films, with 12 at. % Hf composition, have a dielectric constant (K) of similar to8-9 and exhibit a flat-band voltage shift of 60 mV. The leakage current density at V-FB+1 V is 4.7 X 10(-5) A/cm(2) for a 4.7-nm-thick film (capacitance equivalent thickness=2.6 nm) and breakdown strength was >8 MV/cm. (C) 2004 American Vacuum Society.