Previous Article Next Article Table of Contents Journal of Materials Science, Vol.39, No.9, 3217-3219, 2004 DOI10.1023/B:JMSC.0000025864.93045.5f Export Citation Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates Park SH, Kang TW, Kim TW Please enable JavaScript to view the comments powered by Disqus.
