Tables describing the damage profiles created after ion implantation are presented for a wide range of impurities at three tilts and twists (7degrees/22degrees, 0degrees/0degrees, and 45degrees/45degrees), showing the tilt and rotational effects on the damage profiles. While postimplantation damage is well understood in amorphous silicon, damage tables suitable for crystalline silicon, in which channeling effects are dominant, were not yet available. The impurities of concern are B, C, P, N, F, Si, As, Ga, Ge, In, and Sb. Energy ranges from 0.1 to 1000 keV. The Monte Carlo simulations are performed by the binary collision code CRYSTAL-TRIM implemented in DIOS utilizing its full cascade capability. The coefficients are extracted by a technique, called sampling calibration of profiles, which allows any damage profiles between two energies to be predicted by interpolation. This technique overcomes the limitations plaguing some of the most common analytical impurity and damage models. (C) 2004 American Vacuum Society.