The Si wires were grown on a Si(111) substrate using the pulsed laser deposition system. Gold was used as a metal catalyst to form the silicon wires utilizing the vapor-liquid-sol id growth mechanism. Samples were grown under ultrahigh vacuum conditions at a growth temperature of 800degreesC. Typical dimensions of the grown Si wires were 200-500 nm in diameter and 1.6 mum in height. (C) 2004 American Vacuum Society.