As the requirements for minimum resolution on masks continue to tighten, performing proximity correction for mask making will be even more necessary. Mask process correction MPC with a two-Gauss kernel can be used in order to analyze and correct mask process proximity effects. From measured critical dimension (CD) linearity and two-Gauss model, the process kernel parameters a (range of spot size), 8 (range of dry-etching and development process) and eta' (contribution ratio of over a) were extracted, and MPC was performed on the layout of linearity patterns by applying biases to the edge elements of the design. The CD linearity was dramatically improved even for small pattern sizes; the CD values of isolated spaces, lines and spaces, contacts, and isolated lines varied only by 10 nm for 1 mum down to 100 nm feature size pattern. The MPC concept demonstrated in this article has the potential to push the mask-making resolution limit to an even smaller size than 100 nm patterns without any deterioration in CD linearity. (C) 2003 American Vacuum Society.