The propagation speed of the front of electrochemical conversion, from semiconductor to highly doped polymer, in films of regioregular poly(3-hexylthiophene) spin cast on insulating substrates was analyzed. Propagation of the p-doped zone in polymer electrochromic devices was imaged simultaneously with recording of electrochemical data. The current is proportional to the propagation speed and has a Tafel-like behavior when taking the resistive drop in the film into account. The resistivity in the film, which gradually lowers the propagation speed, was used for determination of the conductivity of the p-doped polymer. By combining these values with the doping charge injected into the film during front migration we estimated the hole carrier mobility for different doping levels. (C) 2004 The Electrochemical Society.