193 nm 포토레지스트용 산 증식제로 2-나프탈렌술폰산과 2-티오펜술폰산 에스테르에 관한 연구

소진호; 임권택; 최상준; 정연태; Jin Ho So; Kwon Taek Lim; Sang Jun Choi; Yeon Tae Jeon

Journal of the Korean Industrial and Engineering Chemistry, Vol.15, No.4, 424-428, June, 2004

Export Citation

193 nm 포토레지스트용 산 증식제로 2-나프탈렌술폰산과 2-티오펜술폰산 에스테르에 관한 연구

2-Naphthalenesulfonate and 2-Thiophenesulfonate Esters as Acid Amplifiers for 193 nm Photoresist

소진호, 임권택 , 최상준¹, 정연태^†

부경대학교 공과대학 화상정보공학부, 부산 608-739
¹삼성전자 반도체 연구소, 경기 443-742

Jin Ho So, Kwon Taek Lim , Sang Jun Choi¹, and Yeon Tae Jeon^†

Division of Image and Information Engineering, Pukyong Natioanal University, Pusan 608-739, Korea
¹Process Developmen, Semiconductor R&D Center, Samsung Electronics CO., Ltd., Gyeonggi 443-742, Korea

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초록

193 nm 영역에서 낮은 흡수도를 가지는 새로운 산 증식제로 1-hydroxy-4'-2-naphthalenesulfonyloxy isopropylidene dicyclohexane, 4,4'-Di-2-naphthalenesulfonyloxy isopropylidene dicyclohexane, 1-hydroxy-4'-2-thiophenesulfonyloxy isopropylidene dicyclohexane, 4,4'-Di-2-thiophenesulfonyloxy isopropylidene dicyclohexane를 합성하고 산 증식제로서의 성능을 평가하였다. 합성한 산 증식제는 보통의 레지스트 공정 온도 90 ℃ - 120 ℃의 범위에서 충분한 열적 안정성을 나타내었다. 또한 이러한 산 증식제를 사용한 경우에 광산 발생제만 사용한 poly(tert-butyl methacrylate)필름에 비교하여 2배에서 3배 정도의 감도 증진이 일어남을 확인하였다.

1-hydroxy-4'-2-naphthalenesulfonyloxy isopropylidene dicyclohexane, 4,4'-Di-2-naphthalenesulfonyloxy isopropylidene dicyclohexane, 1-hydroxy-4'-2-thiophenesulfonyloxy isopropylidene dicyclohexane, 4,4'-Di-2-thiophenesulfonyloxy isopropylidene dicyclohexane were synthesized and evaluated for their performance as novel acid amplifiers with a low absorption at 193 nm. These acid amplifiers showed reasonable thermal stability at the usual resist-processing temperature, 90 ℃ ~ 120 ℃. The sensitivity estimation showed enhanced sensitivity of poly(tert-butyl methacrylate) film was 2 ~ 3 times of poly(tert-butyl methacrylate) film with a photo-acid generator but in the absence of acid amplifiers.

Keywords:photoresist;acid-amplifier;thermal stability;photosensitivity;193 nm

[References]

Ito H, Arimitsu K, Ichimura K, Macromol. Chem. Phys., 201, 132 (2000)
Huang WS, Kwong RE, Moreau W, Proc. SPIE, 3999, 591 (2000)
Ohfuji T, Nakano K, Maeda K, Hasegawa E, J. Vac. Sci. Technol. B, 13(6), 3022 (1995)
Ohfuji T, Takahashi M, Ogawa K, Ohtsuka H, Sasago M, Ichimura K, Proc. SPIE, 3049, 76 (1999)
Jeong YT, Lee EJ, Park JY, J. Korean Soc. Imaging Sci. Technol., 7, 110 (2001)
Jeong YT, Lee EJ, Kuen KA, J. Korean Printing Soc., 20(1), 91 (2002)
Park SW, Arimitsu K, Ichimura K, Ohfugi T, Photopolym. Sci. Technol., 12, 293 (1999)

[Related Articles]

[1] Ito H, Arimitsu K, Ichimura K, Macromol. Chem. Phys., 201, 132 (2000)

[2] Huang WS, Kwong RE, Moreau W, Proc. SPIE, 3999, 591 (2000)

[3] Ohfuji T, Nakano K, Maeda K, Hasegawa E, J. Vac. Sci. Technol. B, 13(6), 3022 (1995)

[4] Ohfuji T, Takahashi M, Ogawa K, Ohtsuka H, Sasago M, Ichimura K, Proc. SPIE, 3049, 76 (1999)

[5] Jeong YT, Lee EJ, Park JY, J. Korean Soc. Imaging Sci. Technol., 7, 110 (2001)

[6] Jeong YT, Lee EJ, Kuen KA, J. Korean Printing Soc., 20(1), 91 (2002)

[7] Park SW, Arimitsu K, Ichimura K, Ohfugi T, Photopolym. Sci. Technol., 12, 293 (1999)