졸-겔 공정으로 제조한 Al/Nb<sub>2</sub>O<sub>5</sub> 캐패시터의 특성 분석

김재근; 김인식; 황규연; 여태환; Jaekun Kim; Insik Kim; Kyuyeun Hwang; Taewhan Yeu

Korean Chemical Engineering Research, Vol.42, No.2, 257-261, April, 2004

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졸-겔 공정으로 제조한 Al/Nb₂O₅ 캐패시터의 특성 분석

The Characterization of Al/Nb₂O₅ Capacitors Prepared by Sol-Gel Process

김재근^†, 김인식, 황규연, 여태환

중앙대학교 화학공학과, 156-756 서울시 동작구 흑석동 221

Jaekun Kim^†, Insik Kim, Kyuyeun Hwang, and Taewhan Yeu

Department of Chemical Engineering, Chung-Ang University, 221, Huksuk-dong, Dongjak-gu, Seoul 156-756, Korea

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초록

졸-겔 공정을 통하여 기존의 Al₂O₃ 대비 유전율이 높으면서 알루미늄의 융점 이하 온도에서 결정화가 가능한 Nb₂O₅를 알루미늄 에칭박 위에 코팅하여 Al/Nb₂O₅ 전극을 제조하였다. 니오븀에톡시드, 에탄올, 초산, 디에탄올아민, 증류수의 몰비율이 1 : 80 : 0.5 : 1.5 : 1.5일 때 안정하고 균질한 졸을 얻을 수 있었다. Al/Nb₂O₅ 전극의 물리적 및 전기적 특성을 측정하였으며, 동일한 내전압을 기준으로 전기화학적 양극산화로 제조한 Al/Al₂O₃ 전극과 그 특성을 비교하였다. Al/Nb₂O₅ 전극의 특성은 열처리 온도, 열처리 시간, 코팅횟수에 의존하였다. 16 V 내전압을 기준으로 Al/Nb₂O₅박이 Al/Al₂O₃박에 비하여 28.3% 정도 우수한 CV적을 나타냈으나 누설전류는 다소 열등하였다.

Al/Nb₂O₅ electrode was prepared by sol-gel process using dip-coating method. Nb₂O₅ being higher dielectric constance than Al₂O₃ and being able to be crystallized below the melting point of aluminum was coated on aluminum etched foil. A stable and uniform sol solution was obtained with the mole ratio of 1 : 80 : 0.5 : 1.5 : 1.5-niobium ethoxide : ethyl alcohol : acetic acid : diethanol amine : distilled water. The physical and electrical characteristics of the Al/Nb₂O₅ electrode were evaluated and then were compared with those of Al/Al₂O₃ electrode anodized electrochemically. The characteristics of Al/Nb₂O₅ electrode depended on a calcination temperature, a calcination time and the number of coating times. On the basis of 16 V withstanding voltage, Al/Nb₂O₅ electrode was 28.3% higher C·V product than that of Al/Al₂O₃ but was inferior leakage current to the Al/Al₂O₃ electrode.

Keywords:Al/Nb₂O₅ Electrode;Sol-Gel Process;Niobium Ethoxide;Al/Al₂O₃ Electrode;Aluminum Electrolytic Capacitor

[References]

JCC, Aluminum Electrolytic Condenser, JCC (1996)
Munshi MZA, Handbook of Solid State Batteries & Capacitors, World Scientific, Singapore (1995)
Kudoh Y, Nishino A, Electrochemistry, 69(6), 397 (2001)
GTP, The Latest Condenser Technology and Material-86, GTP, Tokyo (1985)
Kim J, Cho S, Min H, Choi J, Hwang K, J. Korean Ind. Eng. Chem., 11(5), 535 (2000)
Watanabe K, Hirai S, Electrochemistry, 69(6), 407 (2001)
Lai GC, Preparation of Thin Film Having High Capacitance and its Electric Characteristics, Tokyo Aluminium (1997)
Lai GC, J. Ceram. Soc. Jpn., 107(12), 1221 (1999)
Shikanai M, Sakairi M, Takahashi H, Seo M, Takahiro K, Nagata S, Yamaguchi S, J. Electrochem. Soc., 144(8), 2756 (1997)
Davis GD, Moshier WC, Fritz TL, Cote GO, J. Electrochem. Soc., 137(2), 422 (1990)
Kukli K, Ritala M, Leskela M, J. Electrochem. Soc., 148(2), F35 (2001)
Brinker CJ, Sol-Gel Science, Academic Press, Inc. (1990)
Pierre AC, Introduction to Sol-Gel Processing, Kluwer Academic Publishers (1998)

[Related Articles]

[1] JCC, Aluminum Electrolytic Condenser, JCC (1996)

[2] Munshi MZA, Handbook of Solid State Batteries & Capacitors, World Scientific, Singapore (1995)

[3] Kudoh Y, Nishino A, Electrochemistry, 69(6), 397 (2001)

[4] GTP, The Latest Condenser Technology and Material-86, GTP, Tokyo (1985)

[5] Kim J, Cho S, Min H, Choi J, Hwang K, J. Korean Ind. Eng. Chem., 11(5), 535 (2000)

[6] Watanabe K, Hirai S, Electrochemistry, 69(6), 407 (2001)

[7] Lai GC, Preparation of Thin Film Having High Capacitance and its Electric Characteristics, Tokyo Aluminium (1997)

[8] Lai GC, J. Ceram. Soc. Jpn., 107(12), 1221 (1999)

[9] Shikanai M, Sakairi M, Takahashi H, Seo M, Takahiro K, Nagata S, Yamaguchi S, J. Electrochem. Soc., 144(8), 2756 (1997)

[10] Davis GD, Moshier WC, Fritz TL, Cote GO, J. Electrochem. Soc., 137(2), 422 (1990)

[11] Kukli K, Ritala M, Leskela M, J. Electrochem. Soc., 148(2), F35 (2001)

[12] Brinker CJ, Sol-Gel Science, Academic Press, Inc. (1990)

[13] Pierre AC, Introduction to Sol-Gel Processing, Kluwer Academic Publishers (1998)