We successfully patterned TiO2 thin films by metalorganic chemical vapor deposition (MOCVD) on Si(100) substrates where the surface was first modified by an organic thin film. The organic thin film [octadecyltrichlorosilane (OTS)] of self-assembled monolayers (SAMs) was deposited by microcontact printing. Selective deposition of a 130 nm thick TiO2 film was done on a 300-500 degreesC surface prepared by MOCVD without any carrier or bubbler gas. Auger electron spectroscopy and x-ray diffraction analyses showed that the deposited TiO2 material was stoichiometric, polycrystalline, and consisted of anatase phase. Alpha-step profile and optical-microscopic images also showed that the boundaries between the OTS SAMs and selectively deposited TiO2 thin film areas are definite and sharp. Capacitance-voltage measurement of a TiO2 thin film yielded a dielectric constant of 29, suggesting possible application to electronic materials. (C) 2003 American Vacuum Society.