Lateral type GaN field-emission diodes were fabricated by metalorganic chemical vapor deposition. In forming the pattern, two kinds of procedures were proposed: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth utilizing Si3N4 film as the masking layer. The device fabricated using ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for a 7 mum gap and an emission current of similar to 580 nA/10 tips at an anode-to-cathode voltage of 100 V. The field emission characteristics of GaN tips were attributed to the tip structure, low electron affinity and short distance between the cathode and anode tips. (C) 2003 American Vacuum Society.