Synthesis of conducting oxide strontium ruthenate is carried out in a hot-wall tubular reactor, using Sr(C11H19O2)(2)/Ru(C5H5)(2)/O-2 reaction system. Owing to a large difference in depositing efficiency between strontium and ruthenium precursors, the stoichiometric ratio of thin film is controlled in one cycle of two consecutive depositions at different temperatures. Thin films of SrRuO3 single phase are synthesized in the subsequent 700 degreesC annealing. Thin films of SrRuO3 with extra ruthenium oxide can also be prepared by adjusting the molar ratio of RuO2 and SrO layers. The deposition sequence of ruthenium oxide first, strontium oxide later is preferred. If the deposition sequence is reverse, the thin film is plagued with unreacted oxides even when the annealing temperature is raised to 800 degreesC. The relative ease of preparing SrRuO3 thin films, when RuO2 is under SrO, is attributed to evaporation of ruthenium oxide in O-2 and diffusion in its open columnar microstructure. The sheet resistivity of thin film decreases with the ruthenium content. The room temperature resistivity of SrRuO3 film of Ru/(Sr + Ru) = 0.5 is around 910 muohm-cm. The room-temperature resistivity of Ru/(Ru + Sr) = 0.53 decreases to 470 muohm-cm. The root mean square surface roughness of 700 degreesC synthesized SrRuO3 thin film is 22 nm, in a 2 x 2 mum(2) area of film thickness 280 nm. (C) 2003 Kluwer Academic Publishers.