Photoluminescence performances were studied on strain-compensated, GaInNAs/GaNAs/GaAs quantum-well laser-like structures grown by molecular beam epitaxy in an attempt to define optimal conditions for growth temperature and post-growth thermal treatment. The optimal process window is found to be narrow for light emission normal to the layer stack. The highest intensity, the narrowest line width and the longest wavelength were observed for the samples grown at approximately 450 degreesC, followed by annealing at 700 degreesC for 30 min. (C) 2003 Elsevier Science B.V. All rights reserved.